The GaSe thin films have been obtained by cathodic electrodeposition technique onto the fluorine tin oxide (FTO) glass substrates from aqueous acidic solutions at various temperatures of 3230K, 3330K, 3430K, and 3530K. UV-VIS spectrophotometer was used to measure the optical absorption of GaSe thin film at their temperature variations. The optical study illustrated that the direct energy band gap of 3.0 eV, 3.0 eV, 2.8 eV, and 4.0 eV were appraised for electrodeposited GaSe thin film layers at different temperatures of 323 0K, 333 0K, 343 0K and 353 0K respectively. The thickness of the thin film layers increases along with the increase of electrodeposited temperature.
Citation: Olusola O.O., Awodun A. O., and Aladejana A. L. (2021) Investigating the Optical Study of Electrodeaposited GaSe thin film at Different Temperatures, International Research Journal of Pure and Applied Physics, Vol.8, No.2, pp.36-43
This work by European American Journals is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License