Thin film materials for the production of low energy density devices such as supercacitors are very attractive because of the positive impact on the environment. Metal oxides thin films materials are widely used due to their unique properties unlike single structured metal oxide thin films which amy suffer from low efficiency under visible light. In this study the doping of ZnO thin films with Ag form a composite material with new properties due to synergetic effect. The synthesis of ZnO thin film was by electrodeposition technique after which the optical properties were characterized using UV-VIS spectrometer. A slight shift in the absorption spectra to the higher wave length was observed in all the samples. It can be seen that the optical transmission of pure ZnO is about 47 % at 1026 nm in the visible region and after doping it increased to 71 % at 950 nm due to the presence of impurity; negative reflectance spectra shown by most samples is an indication of the incident and refracted wave travelling in the same direction. The optical energy gap of the doped samples ranges from 3.32-3.43 eV, these observations show that the Ag behavior as a p-type dopant of ZnO is good for the realization of low energy density devices such as supercapacitors.
Cisssan Sylvanus (2022) Thin Film Investigation of Silver Doped Zinc Oxide as Electrode Material, European Journal of Material Science, 9, (1), 44-63
The prepared samples of thin-film by laser ablation method were achieved. Powders of doped cadmium oxide with cobalt of ratios (0,1,3,5,7)wt% were mixed and then compressing by approximately 10 tons. The samples were ablated by using Neodymium-YAG laser with 1000mW and obtained the plasma plume at 0.1mbar pressure and 250oC. Results indicate by using AFM, XRD and FTIR devices that the surface roughness and the size particle decrease with increasing dopants and there are existence stretching bonds of cadmium oxide with cobalt, and have of a multi-cubical polycrystalline .The doping leads to a small decrease in the intensity of the peaks of the cadmium oxide at (200) especially at a concentration of ratio 7%, but it was obtained lowering increase at (111), However, low peaks in most of them due to doping. Absorbance infrared ray have the greatest values of pure cadmium oxide at energies (617.61) (1117.31)(1458.62)(1624.15)(3450) cm -1 and also get a reduction in the absorption peaks as a result to doping with cobalt
Effects of Environmental , Alpha and Beta Particles on Lightly Doped p-n Junction Germanium films (Review Completed - Accepted)
The lightly aluminum and arsenic doped germanium films were prepared using thermal co-evaporation process to deposit p-n film junctions with (0.1wt%) concentration. The prepared films were exposed to circumstance and natural radionuclide (Ra226) emitted alpha and (Sr90) emitted beta particles after heat treatment with various dosages .The J-V characteristics refer to shifting in both forward and reverse bias and lead to increase in resistivity, initial and final threshold voltages, resistivity variation percentage, but damage percentages decreases after every stages of exposure. Also the change of current per unit volume increase with environmental exposure and fluency.